SIHW23N60E-GE3
Specificaties
Part Number:
SIHW23N60E-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SIHW23N60E-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Through Hole
Fall Time:
34 ns
Rise Time:
38 ns
Case/Package:
TO-247-3
Input Capacitance:
2.418 nF
Turn-On Delay Time:
22 ns
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
158 mΩ
Continuous Drain Current (ID):
23 A
Drain to Source Breakdown Voltage:
650 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
22 In Stock
Applications:
Hybrid, electric & powertrain systems
Pro audio, video & signage
Enterprise projectors
Weight:
38.000013 g
Packaging:
Bulk
Rds On Max:
158 mΩ
Number of Pins:
3
Number of Channels:
1
Turn-Off Delay Time:
66 ns
Max Power Dissipation:
227 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
600 V
Modelnummer:
SIHW23N60E-GE3
Inleiding
SIHW23N60E-GE3 Overview\\nSIHW23N60E-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SIHW23N60E-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
Verzend RFQ
Voorraad:
MOQ:

