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SI7960DP-T1-GE3
Beschrijving:
SI7960DP-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
Categorie:
Afzonderlijke Halfgeleider
Specificaties
Part Number:
SI7960DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI7960DP-T1-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1.04 mm
Weight:
506.605978 mg
Rise Time:
12 ns
Resistance:
21 mΩ
Case/Package:
SOIC
Power Dissipation:
1.4 W
Number of Elements:
2
Turn-Off Delay Time:
60 ns
Max Power Dissipation:
1.4 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
60 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
936 In Stock
Applications:
Body electronics & lighting
Factory automation & control
Mobile phones
Width:
5.89 mm
Length:
4.9 mm
Fall Time:
12 ns
Rds On Max:
21 mΩ
Nominal Vgs:
3 V
Number of Pins:
8
Number of Channels:
2
Turn-On Delay Time:
12 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
21 mΩ
Continuous Drain Current (ID):
6.2 A
Drain to Source Breakdown Voltage:
60 V
Modelnummer:
SI7960DP-T1-GE3
Inleiding
SI7960DP-T1-GE3 Overview\\nSI7960DP-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI7960DP-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively
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