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SI7252DP-T1-GE3
Beschrijving:
SI7252DP-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
Categorie:
Afzonderlijke Halfgeleider
Specificaties
Part Number:
SI7252DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI7252DP-T1-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$2.19
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Weight:
506.605978 mg
Rise Time:
12 ns
Schedule B:
8541290080
Input Capacitance:
1.17 nF
Threshold Voltage:
1.5 V
Number of Elements:
2
Turn-Off Delay Time:
18 ns
Max Power Dissipation:
46 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
100 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
3006 In Stock
Applications:
Grid infrastructure
Wearables (non-medical)
PC & notebooks
Height:
1.12 mm
Fall Time:
7 ns
Rds On Max:
17 mΩ
Number of Pins:
8
Power Dissipation:
3.5 W
Number of Channels:
2
Turn-On Delay Time:
12 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
18 mΩ
Continuous Drain Current (ID):
36.7 A
Drain to Source Voltage (Vdss):
100 V
Modelnummer:
Si7252dp-t1-GE3
Inleiding
SI7252DP-T1-GE3 Overview\\\\nSI7252DP-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI7252DP-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensive
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