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GT60N321(Q)
Beschrijving:
GT60N321(Q) datasheet pdf and Transistors - IGBTs - Single product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Categorie:
Afzonderlijke Halfgeleider
Specificaties
Part Number:
GT60N321(Q)
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
GT60N321(Q) More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Through Hole
Height:
26 mm
Number of Pins:
3
Max Collector Current:
60 A
Reverse Recovery Time:
2.5 µs
Min Operating Temperature:
-55 °C
Collector Emitter Breakdown Voltage:
1 kV
Products Category:
Discrete Semiconductor - Transistors - IGBTs - Single
Qty:
396 In Stock
Applications:
Building automation
Factory automation & control
Gaming
Width:
5.2 mm
Length:
20.5 mm
Element Configuration:
Single
Max Power Dissipation:
170 W
Max Operating Temperature:
150 °C
Collector Emitter Voltage (VCEO):
1 kV
Modelnummer:
GT60N321 (Q)
Inleiding
GT60N321(Q) Overview\\nGT60N321(Q) is a model belonging to the Transistors - IGBTs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have GT60N321(Q) high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. GT60N321(Q) is
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