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HN1C03F-B(TE85L,F)
Beschrijving:
HN1C03F-B(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Categorie:
Afzonderlijke Halfgeleider
Specificaties
Part Number:
HN1C03F-B(TE85L,F)
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
HN1C03F-B(TE85L,F) More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.43
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Polarity:
NPN
Packaging:
Digi-Reel®
Number of Pins:
6
Number of Elements:
2
Element Configuration:
Dual
Max Collector Current:
300 mA
Gain Bandwidth Product:
30 MHz
Min Operating Temperature:
-55 °C
Collector Base Voltage (VCBO):
50 V
Collector Emitter Breakdown Voltage:
20 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
9204 In Stock
Applications:
Appliances
Enterprise projectors
hFE Min:
200
Frequency:
30 MHz
Case/Package:
SOT-26-6
Power Dissipation:
300 mW
Transition Frequency:
30 MHz
Max Breakdown Voltage:
20 V
Max Power Dissipation:
300 mW
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
25 V
Collector Emitter Voltage (VCEO):
20 V
Collector Emitter Saturation Voltage:
42 mV
Modelnummer:
HN1C03F-B(TE85L,F)
Inleiding
HN1C03F-B(TE85L,F) Overview\\\\nHN1C03F-B(TE85L,F) is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have HN1C03F-B(TE85L,F) high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
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